Si-passivated Ge nFET towards a reliable Ge CMOS

H. Arimura

doi:https://doi.org/10.7567/SSDM.2016.O-1-01

13:30 〜 14:00

[O-1-01(Invited)] Si-passivated Ge nFET towards a reliable Ge CMOS

^○H. Arimura¹, S. Sioncke¹, D. Cott¹, J. Mitard¹, W. Vanherle¹, R. Loo¹, J. Franco¹, T. Conard¹, P. Favia¹, H. Bender¹, L. Witters¹, H. Mertens¹, L. -Å. Ragnarsson¹, G. Pourtois¹, M. Heyns¹, A. Mocuta¹, A. V. -Y. Thean¹, D. Mocuta¹, N. Collaert¹ (1.imec(Belgium))

https://doi.org/10.7567/SSDM.2016.O-1-01

2016 International Conference on Solid State Devices and Materials

[O-1-01(Invited)] Si-passivated Ge nFET towards a reliable Ge CMOS