Growth of Heavily Doped <i>n</i>-Ge Epitaxial Layer by <i>In situ</i> Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition

S. Ike

doi:https://doi.org/10.7567/SSDM.2016.PS-1-02

3:00 PM - 5:00 PM

[PS-1-02] Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition

^○S. Ike^1,2, W. Takeuchi¹, O. Nakatsuka¹, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.Research Fellow of JSPS(Japan), 3.IMaSS, Nagoya Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-1-02

2016 International Conference on Solid State Devices and Materials

[PS-1-02] Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition