The Japan Society of Applied Physics

15:00 〜 17:00

[PS-1-02] Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition

S. Ike1,2, W. Takeuchi1, O. Nakatsuka1, S. Zaima1,3 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.Research Fellow of JSPS(Japan), 3.IMaSS, Nagoya Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-1-02