Formation Technology of Flat Surface after Selective-Epitaxial-Growth on Ion-implamted (100) Oriented Thin SOI Wafers

K. Furukawa

doi:https://doi.org/10.7567/SSDM.2016.PS-1-03

3:00 PM - 5:00 PM

[PS-1-03] Formation Technology of Flat Surface after Selective-Epitaxial-Growth on Ion-implamted (100) Oriented Thin SOI Wafers

^○K. Furukawa¹, A. Teramoto¹, R. Kuroda¹, T. Suwa¹, K. Hashimoto¹, S. Sugawa¹, D. Suzuki², Y. Chiba², K. Ishii², A. Shimizu², K. Hasebe² (1.Tohoku Univ.(Japan), 2.Tokyo Electron Tohoku Ltd.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-1-03

2016 International Conference on Solid State Devices and Materials

[PS-1-03] Formation Technology of Flat Surface after Selective-Epitaxial-Growth on Ion-implamted (100) Oriented Thin SOI Wafers