Impact of SixGe1−x−ySny Interlayer on Reduction in Schottky Barrier Height of Metal/n-Ge Contact

A. Suzuki

doi:https://doi.org/10.7567/SSDM.2016.PS-1-04

2016 International Conference on Solid State Devices and Materials

2016年9月26日〜 2016年9月29日
Tsukuba International Congress Center, Tsukuba, Japan

15:00 〜 17:00

[PS-1-04] Impact of Si_xGe₁₋_x₋_ySn_y Interlayer on Reduction in Schottky Barrier Height of Metal/n-Ge Contact

^○A. Suzuki^1,2, S. Toda¹, O. Nakatsuka¹, M. Sakashita¹, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ.(Japan), 2.Research Fellow of JSPS(Japan), 3.IMaSS, Nagoya Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-1-04

▲

2016 International Conference on Solid State Devices and Materials

[PS-1-04] Impact of SixGe1−x−ySny Interlayer on Reduction in Schottky Barrier Height of Metal/n-Ge Contact

[PS-1-04] Impact of Si_xGe₁₋_x₋_ySn_y Interlayer on Reduction in Schottky Barrier Height of Metal/n-Ge Contact