The Japan Society of Applied Physics

15:00 〜 17:00

[PS-1-05] Self-Aligned Deposition of Source/Drain Contact Metal with Electrodeposition Technique for High Performance Schottky Barrier Ge MOSFETs Fabrication

D. Zhai1, J. Jiang1,2, J. Li1, X. Yu1, R. Zhang1, Y. Zhao1 (1.Zhejiang Univ.(China), 2.The:51th Res. Inst. of China Electronics Tech. Group Corp.(China))

https://doi.org/10.7567/SSDM.2016.PS-1-05