Self-Aligned Deposition of Source/Drain Contact Metal with Electrodeposition Technique for High Performance Schottky Barrier Ge MOSFETs Fabrication

D. Zhai

doi:https://doi.org/10.7567/SSDM.2016.PS-1-05

15:00 〜 17:00

[PS-1-05] Self-Aligned Deposition of Source/Drain Contact Metal with Electrodeposition Technique for High Performance Schottky Barrier Ge MOSFETs Fabrication

^○D. Zhai¹, J. Jiang^1,2, J. Li¹, X. Yu¹, R. Zhang¹, Y. Zhao¹ (1.Zhejiang Univ.(China), 2.The:51th Res. Inst. of China Electronics Tech. Group Corp.(China))

https://doi.org/10.7567/SSDM.2016.PS-1-05

2016 International Conference on Solid State Devices and Materials

[PS-1-05] Self-Aligned Deposition of Source/Drain Contact Metal with Electrodeposition Technique for High Performance Schottky Barrier Ge MOSFETs Fabrication