The Japan Society of Applied Physics

15:00 〜 17:00

[PS-1-08] Enhanced Electrical and Reliability Characteristics in Ge p-MOSFETs by In-situ Plasma Treatments and Capping Hf/Zr on Interfacial Layers

T. Huang1, C. Hsu1, K. S. Chang-Liao1, Y. Hsu1, C. Huang1, Y. Li1 (1.National Tsing Hua Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2016.PS-1-08