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[PS-14-08] A Surface-Potential-Based Reverse-Transfer Capacitance Model for Vertical SiC DMOSFET

^○M. Shintani¹, Y. Nakamura¹, M. Hiromoto¹, T. Hikihara¹, T. Sato¹ (1.Kyoto Univ.(Japan))

https://doi.org/10.7567/SSDM.2016.PS-14-08