The Japan Society of Applied Physics

15:00 〜 17:00

[PS-6-04] Effect of Interface Traps on the Device Performances of the Tunneling Field-Effect Transistors Based on InGaAs

R. H. Kwon1, Y. J. Yoon1, J. H. Seo1, Y. I. Jang1, M. S. Jo1, J. -H. Lee1, I. M. Kang1 (1.Kyungpook National Univ.(Korea))

https://doi.org/10.7567/SSDM.2016.PS-6-04