The Japan Society of Applied Physics

11:33 AM - 11:36 AM

[PS-9-12(Late News)] Gate-stack Engineering of Self-organized Nanospherical Ge-gate/SiO2/Si1-xGex-channel on Si (100) and Si (110) for Ge MOS Devices

P. H. Liao1, C. W. Tien2, K. P. Peng2, H. C. Lin2, T. George1,P. W. Li1,2 (1.National Central Univ.(Taiwan), 2.NCTU(Taiwan))