2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (441 - 450)

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[PS-6-01] InAs Quantum-Well MOSFET Performance Improvement by Using PEALD AlN Passivation Layer and In-Situ NH₃ Post Remote-Plasma Treatment

P. C. Chang¹, Q. H. Luc¹, G. Y. Lin¹,^○C. C. Chang¹, J. W. Lin¹, C. C. Fan Chang¹, K. S. Yang¹, Y. C. Lin¹, S. M. Sze¹, E. Y. Chang¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:00 AM - 11:03 AM |PDF Download

[PS-6-02] Deposition Temperature and Al₂O₃ Thickness Dependence on the Mobility of HfO₂/Al₂O₃/InGaAs Gate Stacks

^○K. Ohsawa¹, N. Kise¹, Y. Miyamoto¹ (1.Tokyo Tech(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:03 AM - 11:06 AM |PDF Download

[PS-6-03] Equivalent Oxide Thickness Self-Reduction and Work Function Self-Alignment Using Ti/AlN Doping Layer for Mo/HfO₂/InGaAs NMOS

^○H. Do¹, Q. Luc¹, M. Ha¹, S. Huynh¹, C. Chang¹, J. Lin¹, K. Yang¹, C. Chang¹, Y. Lin¹, E. Chang¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:06 AM - 11:09 AM |PDF Download

[PS-6-04] Effect of Interface Traps on the Device Performances of the Tunneling Field-Effect Transistors Based on InGaAs

^○R. H. Kwon¹, Y. J. Yoon¹, J. H. Seo¹, Y. I. Jang¹, M. S. Jo¹, J. -H. Lee¹, I. M. Kang¹ (1.Kyungpook National Univ.(Korea))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:09 AM - 11:12 AM |PDF Download

[PS-6-05] Atomic-Layer Deposited High-k Metal Gates of Ge/III Metal -Oxide-Semiconductor Devices and numerical simulations

B. Y. Chen^1,2,^○C. L. Chu¹, J. L. Chen³, G. L. Luo¹, T. T. Li⁴, E. Y. Chang² (1.National Nano Device Labs.(Taiwan), 2.NCTU(Taiwan), 3.I-Shou Univ.(Taiwan), 4.National Central Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:12 AM - 11:15 AM |PDF Download

[PS-6-06] The Study of GaN-based Fin-HEMT with Low Current Collapse Phenomenon by Plasma Enhanced Atomic Layer Deposition

^○A. Tzou¹, S. Chen², Z. Li³, C. Chang¹, H. Kuo^1,2 (1.NCTU(Taiwan), 2.National Nano Device Labs.(Taiwan), 3.Epistar(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:15 AM - 11:18 AM |PDF Download

[PS-6-07] Effects of Different Fe-doped GaN Buffer in AlGaN/GaN HEMTs on Si Substrate

^○S. C. Chen¹, J. W. Chiu¹, B. H. Li¹, H. C. Chiu¹, R. Xuan², C. W. Hu² (1.Chang Gung Univ.(Taiwan), 2.Episil-Precision Inc(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:18 AM - 11:21 AM |PDF Download

[PS-6-08] Leakage Current Reduction of Gated Ohmic Anode AlGaN/GaN Schottky Barrier Dioide by Applying Anode Edge Termination

^○R. Ki¹, I. Hwang¹, H. Cha², K. Seo¹ (1.Seoul National Univ.(Korea), 2.Hongik Univ.(Korea))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:21 AM - 11:24 AM |PDF Download

[PS-6-09] The Influence of AlGaN/GaN Schottky Barrier Diode (SBD) with SiH₄ Doping in Barrier Layer

^○J. W. Chiu¹, S. C. Chen¹, B. H. Li¹, H. C. Chiu¹, R. Xuan², C. W. Hu² (1.Chang Gung Univ.(Taiwan), 2.Episil-Precision Inc(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:24 AM - 11:27 AM |PDF Download

[PS-6-10] ZnO and ZnON Film-Profile Engineered TFTs for BEOL High-Voltage Operations

^○M. Wu¹, H. Lin¹, P. Li¹, T. Huang¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:27 AM - 11:30 AM |PDF Download

734 results (441 - 450)

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