2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (651 - 660)

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[PS-13-09] Effects of Nickel Doping on the Optical and Electrical Properties of MoS₂ Photodetectors

^○Z. W. Chen¹, T. S. Ko¹, D. Y. Lin¹, J. Suh², Z. S. Chen¹ (1.National Changhua Univ. of Edu.(Taiwan), 2.Cornell Univ.(USA))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:24 AM - 11:27 AM |PDF Download

[PS-13-10] Fabrication of Graphene/Diamond Heterojunctions and Their Electronic Properties

^○K. Ueda¹, S. Tanaka¹, H. Asano¹ (1.Nagoya Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:27 AM - 11:30 AM |PDF Download

[PS-13-11] Structural and Optical Properties of Wurtzite InP/AlInP Core-Multishell Nanowires

^○F. Ishizaka¹, Y. Hiraya¹, K. Tomioka^1,2, J. Motohisa¹, T. Fukui¹ (1.Hokkaido Univ.(Japan), 2.JST-PRESTO(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:30 AM - 11:33 AM |PDF Download

[PS-13-12] Photoelectrochemical Properties of Wurtzite Gallium Phosphide Nanowires grown on GaP (111)B substrates

^○K. Tateno^1,2, Y. Ono³, K. Kumakura¹ (1.NTT BRL(Japan), 2.NTT Nanophotonics Center(Japan), 3.NTT Device Tech. Labs.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:33 AM - 11:36 AM |PDF Download

[PS-13-13] Improvement of Silicon Nanowire Solar Cells Made by Metal Catalyzed Electroless Etching and Nano-imprint Lithography

^○J. Chen^1,2, T. Subramani¹, W. Jevasuwan¹, N. Fukata^1,2 (1.NIMS(Japan), 2.Univ. of Tsukuba(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:36 AM - 11:39 AM |PDF Download

[PS-13-14] Photocatalytic Performance of Multi-Morphological Nb-doped TiO₂ Nanofibers

^○T. H. Lin¹, K. C. Hsiao¹, J. S. Chih¹, P. Y. Wu¹, T. F. Lin¹, M. C. Wu^1,2 (1.Chang Gung Univ.(Taiwan), 2.Chang Gung Memorial Hospital(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:39 AM - 11:42 AM |PDF Download

[PS-13-15(Late News)] First-Principles Device Simulations of All Two-Dimensional Material Tunneling Field-Effect Transistors

^○M. Ohfuchi¹, T. Ozaki² (1.Fujitsu Labs. Ltd.(Japan), 2.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:42 AM - 11:45 AM |PDF Download

[PS-13-01] Thickness-Dependent Flatband Voltage Shift in MOSCAP with MoS₂ and High-k Gate Dielectric

^○R. Yang¹, J. Cai², S. Wang², D. Chi², K. W. Ang¹ (1.National Univ. of Singapore(Singapore), 2.Institute of Materials Research and Engineering(Singapore))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-13-02] First Principles Calculation of Charged Vacancies in Single-Layer Molybdenum Disulfide

^○S. Urasaki¹, H. Kageshima¹ (1.Shimane Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-13-03] High Performance Ultrathin Micro-Supercapacitors

^○F. Tanaka¹, A. Sekiguchi², K. U. Laszczyk¹, K. Kobashi², T. Yamada², K. Hata² (1.TASC(Japan), 2.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

734 results (651 - 660)

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