10:20 〜 10:40
[A-5-03] Cross Point Type 1T-1MTJ STT-MRAM Cell with 60 nm Multi-pillar Vertical Body Channel MOSFET under 55 nm p-MTJ and Its Beyond for High Density STT-MRAM
○T. Sasaki1,2,3, T. Endoh1,2,3
(1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))
https://doi.org/10.7567/SSDM.2017.A-5-03