The Japan Society of Applied Physics

10:20 〜 10:40

[A-5-03] Cross Point Type 1T-1MTJ STT-MRAM Cell with 60 nm Multi-pillar Vertical Body Channel MOSFET under 55 nm p-MTJ and Its Beyond for High Density STT-MRAM

T. Sasaki1,2,3, T. Endoh1,2,3 (1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))

https://doi.org/10.7567/SSDM.2017.A-5-03