Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency

M. Shimizu

doi:https://doi.org/10.7567/SSDM.2017.A-6-01

11:15 〜 11:35

[A-6-01] Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency

^○M. Shimizu¹, H. Yoda¹, S. Shirotori¹, N. Shimomura¹, Y. Ohsawa¹, T. Inokuchi¹, K. Koui¹, Y. Kato¹, S. Oikawa¹, H. Sugiyama¹, A. Buyandalai¹, M. Ishikawa¹, K. Ikegami¹, Y. Kamiguchi¹, Y. Saito¹, A. Kurobe¹ (1.Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2017.A-6-01

2017 International Conference on Solid State Devices and Materials

[A-6-01] Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency