The Japan Society of Applied Physics

11:15 〜 11:35

[A-6-01] Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency

M. Shimizu1, H. Yoda1, S. Shirotori1, N. Shimomura1, Y. Ohsawa1, T. Inokuchi1, K. Koui1, Y. Kato1, S. Oikawa1, H. Sugiyama1, A. Buyandalai1, M. Ishikawa1, K. Ikegami1, Y. Kamiguchi1, Y. Saito1, A. Kurobe1 (1.Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2017.A-6-01