11:35 〜 11:55

[A-6-02] Sub 1 V 60 nm Vertical Body Channel MOSFET Based 6T SRAM Array with Wide Noise Margin and Excellent Power Delay Product

^○R. Ogasawara^1,2,3, T. Endoh^1,2,3 (1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))

https://doi.org/10.7567/SSDM.2017.A-6-02