16:40 〜 16:55

[A-8-05 (Late News)] Programming Current Reduction in GeS₂+Sb₂Te₃ Based Phase-Change Memory

^○J. Kluge^1,2,3, A. Verdy², G. Navarro², S. Blonkowski¹, V. Sousa², P. Kowalczyk², M. Bernard², N. Bernier², G. Bourgeois², N. Castellani², P. Noé², E. Nowak², L. Perniola² (1.STMicroelectronics (France), 2.CEA-Leti (France), 3.IMEP-LAHC (France))

https://doi.org/10.7567/SSDM.2017.A-8-05