2017 International Conference on Solid State Devices and Materials
Sep 19, 2017 - Sep 22, 2017 Sendai International Center
4:40 PM - 4:55 PM
[B-2-04] Influence of Surface Treatment of SiO2 Gate Insulator for Pentacene-based OFETs with Nitrogen-doped LaB6 Bottom-Contact Electrode Formation Process
○Y. Maeda1, M. Hiroki1, S. Ohmi1 (1.Tokyo Tech (Japan))
