OxRAM integration above FDSOI transistor drain: Integration approach and process impact on electrical characteristics

M. Barlas

doi:https://doi.org/10.7567/SSDM.2017.D-1-04

14:40 〜 15:00

[D-1-04] OxRAM integration above FDSOI transistor drain: Integration approach and process impact on electrical characteristics

^○M. Barlas¹, L. Grenouillet¹, E. Vianello¹, V. Delaye¹, T. Dewolf¹, G. Audoit¹, N. Rambal¹, S. Bernasconi¹, C. Vizioz¹, N. Posseme¹, S. Barnola¹, B. Bouix¹, O. Pollet¹, C. Comboroure², N. Allouti¹, P. Rodriguez¹, V. Beugin¹, V. Loup¹, C. Tallaron², S. Chevalliez², R. Coquand¹, C. Jahan¹, S. Reboh¹, A. Toffoli¹, S. Barraud¹, L. Brevard¹, Y. Morand¹, M. Vinet¹, O. Faynot¹, L. Perniola¹ (1.CEA-LETI (France), 2.STMicroelectronics (France))

https://doi.org/10.7567/SSDM.2017.D-1-04

2017 International Conference on Solid State Devices and Materials

[D-1-04] OxRAM integration above FDSOI transistor drain: Integration approach and process impact on electrical characteristics