17:10 〜 17:30

[D-2-05] Read Disturb Improvement for 1znm TLC NAND Flash

^○H. -N. Yoo¹, H. Shim¹, J. -W. Kim¹, K. -H. Noh¹, H. Chang¹ (1.SK Hynix Inc. (Korea))

https://doi.org/10.7567/SSDM.2017.D-2-05