Improved Performance and Sufficient Reliability In<sub>0.53</sub>Ga<sub>0.47</sub>As FinFET Using NH3 Plasma Treatment

K. S. Yang

doi:https://doi.org/10.7567/SSDM.2017.E-1-05

3:00 PM - 3:15 PM

[E-1-05 (Late News)] Improved Performance and Sufficient Reliability In_0.53Ga_0.47As FinFET Using NH3 Plasma Treatment

^○K. S. Yang¹, Q. -H. Luc¹, C. C. Chang¹, J. W. Lin¹, C. -C. F. Chiang¹, H. B. Do¹, M. T. H. Ha¹, S. H. Huynh¹, Y. D. Jin¹, T. A. Nguyen¹, Y. -C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.E-1-05

2017 International Conference on Solid State Devices and Materials

[E-1-05 (Late News)] Improved Performance and Sufficient Reliability In0.53Ga0.47As FinFET Using NH3 Plasma Treatment

[E-1-05 (Late News)] Improved Performance and Sufficient Reliability In_0.53Ga_0.47As FinFET Using NH3 Plasma Treatment