17:10 〜 17:30

[E-2-05] High Performance Top-Gate Zinc Oxide Thin Film Transistor (ZnO TFT) by Combination of Post Oxidation and Annealing

^○K. Kato¹, H. Matsui¹, H. Tabata¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2017.E-2-05