Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing

S. Glass

doi:https://doi.org/10.7567/SSDM.2017.E-3-02

10:00 〜 10:20

[E-3-02] Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing

^○S. Glass¹, N. von den Driesch¹, S. Strangio², C. Schulte-Braucks¹, T. Rieger¹, D. Buca¹, S. Mantl¹, Q. -T. Zhao¹ (1.Forschungszentrum Juelich (Germany), 2.Univ. of Udine (Italy))

https://doi.org/10.7567/SSDM.2017.E-3-02

2017 International Conference on Solid State Devices and Materials

[E-3-02] Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing