The Japan Society of Applied Physics

10:20 〜 10:40

[E-3-03] Performance Improvement of Ge-source/Si-channel Hetero-Junction Tunneling FETs: Effects of Annealing Gas and Drain Doping Concentration

T. -E. Bae1, Y. Wakabayashi1, R. Nakane1, M. Takenaka1, S. Takagi1 (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2017.E-3-03