10:20 〜 10:40

[E-3-03] Performance Improvement of Ge-source/Si-channel Hetero-Junction Tunneling FETs: Effects of Annealing Gas and Drain Doping Concentration

^○T. -E. Bae¹, Y. Wakabayashi¹, R. Nakane¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2017.E-3-03