10:40 〜 11:00

[E-3-04] Ge p-channel Tunneling FETs with Steep Phosphorus Profile Source Junctions

^○R. Takaguchi¹, R. Matsumura¹, T. Katoh¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2017.E-3-04