14:40 〜 15:00

[E-4-03] Fringing Field Effects in Ferroelectric Negative Capacitance Field-Effect Transistors

^○J. Hattori¹, K. Fukuda¹, T. Ikegami¹, H. Ota¹, S. Migita¹, H. Asai¹, A. Toriumi² (1.AIST (Japan), 2.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2017.E-4-03