2:40 PM - 3:00 PM
[E-4-03] Fringing Field Effects in Ferroelectric Negative Capacitance Field-Effect Transistors
○J. Hattori1, K. Fukuda1, T. Ikegami1, H. Ota1, S. Migita1, H. Asai1, A. Toriumi2
(1.AIST (Japan), 2.Univ. of Tokyo (Japan))
https://doi.org/10.7567/SSDM.2017.E-4-03