10:20 〜 10:40

[G-5-03] Analysis of Random Telegraph Noise Behaviers of nMOS and pMOS toward Back Bias Voltage Changing

^○T. Mawaki¹, A. Teramoto¹, R. Kuroda¹, S. Ichino¹, S. Sugawa¹ (1.Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.G-5-03