Demonstration of p-type graphene barristor using a Schottky contact between graphene and p-type organic semiconductor

K. Han

doi:https://doi.org/10.7567/SSDM.2017.J-3-06

11:00 〜 11:15

[J-3-06] Demonstration of p-type graphene barristor using a Schottky contact between graphene and p-type organic semiconductor

^○K. Han¹, Y. J. Kim¹, S. Heo¹, C. -H. Kim¹, J. H. Kim¹, S. -Y. Kim¹, H. J. Hwang¹, S. K. Lee¹, H. J. Lee¹, M. -H. Yoon¹, B. H. Lee¹ (1.Gwangju Inst. of Sci. and Tech. (Korea))

https://doi.org/10.7567/SSDM.2017.J-3-06

2017 International Conference on Solid State Devices and Materials

[J-3-06] Demonstration of p-type graphene barristor using a Schottky contact between graphene and p-type organic semiconductor