12:15 〜 12:30

[J-6-04 (Late News)] InAs Nanotube FETs with Atomic-Layer-Deposited Al₂O₃/ZnO Gate-Stack

^○S. Sasaki¹, K. Tateno¹, G. Zhang¹ (1.NTT Basic Res. Labs. (Japan))

https://doi.org/10.7567/SSDM.2017.J-6-04