The Japan Society of Applied Physics

14:40 〜 15:00

[K-1-04] Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy

W. -C. Wen1, T. Sakaguchi1, K. Yamamoto1, D. Wang1, H. Nakashima1 (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.K-1-04