Characterization of near-interface border-traps in GeO<sub>2</sub>/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy

2:40 PM - 3:00 PM

[K-1-04] Characterization of near-interface border-traps in GeO₂/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy

^○W. -C. Wen¹, T. Sakaguchi¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. (Japan))