10:50 〜 11:10

[K-3-05] Ge and O Valence States in GeO_x Interfacial Layer on Hole Mobility of Low EOT Ge pMOSFET

^○J. -S. Li¹, S. -H. Yi¹, W. -Y. Hsu¹, J. Huang¹, C. -W. Hsu¹, T. -Y. Wu¹, D. -B. Ruan¹, K. -S. Chang-Liao¹ (1.National Tsing Hua Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.K-3-05