11:10 〜 11:25

[K-3-06 (Late News)] Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs

^○T. Sakaguchi¹, K. Akiyama¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2017.K-3-06