The Japan Society of Applied Physics

11:35 〜 11:55

[K-6-02] Guiding principles for the fabrication of V-MOSFETs based on a Si emission model

T. Nagura1, K. Chokawa1, H. Shirakawa1, M. Araidai1,4, H. Kageshima2,4, T. Endoh3,4, K. Shiraishi1,4 (1.Nagoya Univ. (Japan), 2.Shimane Univ. (Japan), 3.Tohoku Univ. (Japan), 4.JST-ACCEL (Japan))

https://doi.org/10.7567/SSDM.2017.K-6-02