Guiding principles for the fabrication of V-MOSFETs based on a Si emission model

T. Nagura

doi:https://doi.org/10.7567/SSDM.2017.K-6-02

11:35 〜 11:55

[K-6-02] Guiding principles for the fabrication of V-MOSFETs based on a Si emission model

^○T. Nagura¹, K. Chokawa¹, H. Shirakawa¹, M. Araidai^1,4, H. Kageshima^2,4, T. Endoh^3,4, K. Shiraishi^1,4 (1.Nagoya Univ. (Japan), 2.Shimane Univ. (Japan), 3.Tohoku Univ. (Japan), 4.JST-ACCEL (Japan))

https://doi.org/10.7567/SSDM.2017.K-6-02

2017 International Conference on Solid State Devices and Materials

[K-6-02] Guiding principles for the fabrication of V-MOSFETs based on a Si emission model