The Japan Society of Applied Physics

10:15 AM - 10:30 AM

[M-5-03] MOCVD Selective Growth of InAs Nanowires on Patterned Silicon Substrate by Optimizing Gas Flow Rate and Annealing Temperature

D. Anandan1, H. W. Yu1, H. L. Ko1, R. K. Kakkerla1, V. Nagarajan1, S. K. Singh1, E. Y. Chang1 (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.M-5-03