MOCVD Selective Growth of InAs Nanowires on Patterned Silicon Substrate by Optimizing Gas Flow Rate and Annealing Temperature

10:15 AM - 10:30 AM

[M-5-03] MOCVD Selective Growth of InAs Nanowires on Patterned Silicon Substrate by Optimizing Gas Flow Rate and Annealing Temperature

^○D. Anandan¹, H. W. Yu¹, H. L. Ko¹, R. K. Kakkerla¹, V. Nagarajan¹, S. K. Singh¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))