14:15 〜 14:30

[N-1-03] Etching Control in Side-Recess Formation of High Electron Mobility Transistor for High-Responsivity Terahertz Detector

^○S. Suzuki¹, S. Shibuya¹, Y. Isobe¹ (1.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2017.N-1-03