10:30 〜 10:45

[N-3-04] Threshold voltages of Al₂O₃/AlGaN/GaN and AlTiO/AlGaN/GaN metal-insulator-semiconductor devices

^○S. P. Le¹, T. Ui¹, D. D. Nguyen¹, T. Suzuki¹ (1.JAIST (Japan))

https://doi.org/10.7567/SSDM.2017.N-3-04