10:45 〜 11:00

[N-3-05] Drain-induced barrier lowering in normally-off AlGaN-GaN MOSFETs with single- or double-recess overlapped gate

^○T. Sato¹, K. Uryu¹, J. Okayasu¹, M. Kimishima¹, T. Suzuki² (1.Advantest Labs. Ltd. (Japan), 2.JAIST (Japan))

https://doi.org/10.7567/SSDM.2017.N-3-05