The Japan Society of Applied Physics

11:15 〜 11:45

[N-6-01 (Invited)] Demonstration of Reduction in Vce (sat) of IGBT based on a 3D Scaling Principle

K. Kakushima1, T. Hoshii1, K. Tsutsui1, A. Nakajima2, S. Nishizawa3, H. Wakabayashi1, I. Muneta1, K. Sato4, T. Matsudai5, W. Saito5, T. Saraya6, K. Itou6, M. Fukui6, S. Suzuki6, M. Kobayashi6, T. Takakura6, T. Hiramoto6, A. Ogura7, Y. Numasawa7, I. Omura8, H. Ohashi1, H. Iwai1 (1.Tokyo Tech (Japan), 2.AIST (Japan), 3.Kyushu Univ. (Japan), 4.Mitsubishi Electric Corp. (Japan), 5.Toshiba Electronic Devices & Storage Corp. (Japan), 6.Univ. of Tokyo (Japan), 7.Meiji Univ. (Japan), 8.Kyushu Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2017.N-6-01