11:15 〜 11:45

[N-6-01 (Invited)] Demonstration of Reduction in Vce (sat) of IGBT based on a 3D Scaling Principle

^○K. Kakushima¹, T. Hoshii¹, K. Tsutsui¹, A. Nakajima², S. Nishizawa³, H. Wakabayashi¹, I. Muneta¹, K. Sato⁴, T. Matsudai⁵, W. Saito⁵, T. Saraya⁶, K. Itou⁶, M. Fukui⁶, S. Suzuki⁶, M. Kobayashi⁶, T. Takakura⁶, T. Hiramoto⁶, A. Ogura⁷, Y. Numasawa⁷, I. Omura⁸, H. Ohashi¹, H. Iwai¹ (1.Tokyo Tech (Japan), 2.AIST (Japan), 3.Kyushu Univ. (Japan), 4.Mitsubishi Electric Corp. (Japan), 5.Toshiba Electronic Devices & Storage Corp. (Japan), 6.Univ. of Tokyo (Japan), 7.Meiji Univ. (Japan), 8.Kyushu Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2017.N-6-01