12:00 〜 12:15

[N-6-03] Potential of the 0.35 µm CMOS gate driver technology for the GaN power devices

^○S. Miyano¹, T. Akagi¹, S. Abe¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2017.N-6-03