12:15 〜 12:30
[N-6-04] Vertical-type 2DHG Diamond MOSFETs
○N. Oi1, T. Kudo1, T. Muta1, S. Okubo1, I. Tsuyuzaki1, T. Kageura1, M. Inaba1,2, S. Onoda3, A. Hiraiwa1, H. Kawarada1
(1.Waseda Univ. (Japan), 2.Nagoya Univ. (Japan), 3.National Inst for Quantum and Radiological Sci. and Tech. (Japan))
https://doi.org/10.7567/SSDM.2017.N-6-04