High-performance E-mode recessed GaN Power MIS-HEMT with La-silicate gate insulator

C. C. Hsu

doi:https://doi.org/10.7567/SSDM.2017.N-7-03

14:10 〜 14:25

[N-7-03] High-performance E-mode recessed GaN Power MIS-HEMT with La-silicate gate insulator

^○C. C. Hsu¹, J. H. Lee¹, Y. C. Lin¹, J. C. Lin¹, C. H. Wu¹, J. N. Yao¹, H. T. Hsu¹, K. Kakushima², H. Iwai², E. Y. Chang¹ (1.National Chiao Yung Univ. (Taiwan), 2.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2017.N-7-03

2017 International Conference on Solid State Devices and Materials

[N-7-03] High-performance E-mode recessed GaN Power MIS-HEMT with La-silicate gate insulator