Enhancing the Performance of Ni-In0.53Ga0.47As MOSFETs Using Post Silicon Dopant Process

H. Q. Luc

doi:https://doi.org/10.7567/SSDM.2017.N-7-05

14:40 〜 14:55

[N-7-05 (Late News)] Enhancing the Performance of Ni-In0.53Ga0.47As MOSFETs Using Post Silicon Dopant Process

^○H. Q. Luc¹, W. J. Lin¹, S. K. Yang¹, C. C. Chang¹, C. -C. C. Fan¹, B. H. Do¹, M. T. H. Ha¹, H. S. Huynh¹, D. Y. Jin¹, A. T. Nguyen¹, C. Y. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2017.N-7-05

2017 International Conference on Solid State Devices and Materials

[N-7-05 (Late News)] Enhancing the Performance of Ni-In0.53Ga0.47As MOSFETs Using Post Silicon Dopant Process